Numerical Simulation of Resonant Tunneling Diodes with a Quantum-Drift-Diffusion Model

Keywords

Code:
MOX 11
Title:
Numerical Simulation of Resonant Tunneling Diodes with a Quantum-Drift-Diffusion Model
Date:
Sunday 5th January 2003
Author(s):
Micheletti, Stefano; Sacco, Riccardo, Simioni, Riccardo
Download link:
Abstract:
We deal with a Quantum-Drift-Diffusion (QDD) model for the description of transport in semiconductors which generalizes the standard Drift-Diffusion model (DD) through extra terms that take into account some quantum dispersive corrections. We also study numerically the influence on the I-V curve of the electron effective mass, the barrier height width, and of the ambient temperature. The performance of several linearization algorithms, i.e. a two Gummel-type iteractions and the fully-coupled Newton method are also compared.
This report, or a modified version of it, has been also submitted to, or published on
Micheletti, S.; Sacco, R., Simioni, R., Numerical Simulation of Resonant Tunneling Diodes with a Quantum-Drift-Diffusion Model, Sci. Comp. in Elect. Eng. Springer-Verlag series: Mathematics in Industry, Eds: W.H.A. Schilders, et al., pp. 313-320, 2004