Publication Results



Code: MOX 11
Title: Numerical Simulation of Resonant Tunneling Diodes with a Quantum-Drift-Diffusion Model
Date: Sunday 5th January 2003
Author(s) : Micheletti, Stefano; Sacco, Riccardo, Simioni, Riccardo
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Abstract: We deal with a Quantum-Drift-Diffusion (QDD) model for the description of transport in semiconductors which generalizes the standard Drift-Diffusion model (DD) through extra terms that take into account some quantum dispersive corrections. We also study numerically the influence on the I-V curve of the electron effective mass, the barrier height width, and of the ambient temperature. The performance of several linearization algorithms, i.e. a two Gummel-type iteractions and the fully-coupled Newton method are also compared.

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Micheletti, S.; Sacco, R., Simioni, R., Numerical Simulation of Resonant Tunneling Diodes with a Quantum-Drift-Diffusion Model, Sci. Comp. in Elect. Eng. Springer-Verlag series: Mathematics in Industry, Eds: W.H.A. Schilders, et al., pp. 313-320, 2004